Electroluminescence from bipolar resonant tunneling diodes
نویسندگان
چکیده
منابع مشابه
Electroluminescence at Si Bandgap Energy from MetahOxide-Semiconductor Tunneling Diodes
We report room-temperature electroluninescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The Ultrathin gate oxide with thickness 1 3 urn was grown by rapid thennal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of iO, which exce...
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Dedication To my family. v Acknowledgements I would like to acknowledge, foremost, my advisor Prof. Sanjay Banerjee. I should thank him for providing me the opportunity to pursue graduate study, his constant support for the last six years – both intellectual and material, and the flexibility he afforded to me to define and follow my interests. Second, I would like to acknowledge my co-advisor P...
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– We develop a model to describe the transmission coefficient and tunneling current in the presence of electron-photon coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between electronic states with different wave numbers. This is crucial to explain the experimental features observed in the tunneling current through a double barrier whi...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1992
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.107380